2014
- Categories:History of development
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- Time of issue:2022-09-26
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(Summary description)Ø 2 inch volume production pilot test, dislocation density 10⁵ cm-².
2014
(Summary description)Ø 2 inch volume production pilot test, dislocation density 10⁵ cm-².
- Categories:History of development
- Author:
- Origin:
- Time of issue:2022-09-26
- Views:0
Conducted research and development of 4-inch GaN single crystal substrates; supported by the 863 project of the Ministry of Science and Technology of the People's Republic of China on the preparation of large size GaN single crystal substrates and homogeneous epitaxy
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