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10*10.5mm2Self-supporting Gallium Nitride wafers (silicon doped)
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10x10.5 mm²-FS-GaN datasheet
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4" self-supporting GaN wafers (non-doped)Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm -
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2-inch self-supporting GaN wafers (iron-doped)Specifications: GaN-FS-C-SI-C50 Size: Ф 50.8 ± 1 mm Thickness: 350 ± 25 μm Resistivity(300k)：> 1 x 106 Ω*cm -
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10*10.5mm2Self-supporting Gallium Nitride wafers (silicon doped)Specifications: GaN-FS-C-N-S10 Size: Ф 10 x 10.5 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.05 Ω-cm
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10*10.5mm2Self-supporting Gallium Nitride wafers (iron doped)Specifications: GaN-FS-C-SI-S10 Size: Ф 10 x 10.5 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：> 106 Ω·cm
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5*10mm² non-polar GaN self-supporting substrate A-plane (UID/N/SI)Specifications: GaN-FS-A-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.5 Ω-cm -
5*10mm² non-polar GaN self-supporting substrate M-plane (UID/N/SI)Specifications: GaN-FS-M-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.5 Ω-cm
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5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(10-11)plane (UID/N/SI)Specifications: GaN-FS-SP-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：< 0.5 Ω·cm
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5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(11-22)plane (UID/N/SI)Specifications: GaN-FS-SP-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：< 0.5 Ω·cm
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5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(20-2-1)plane (UID/N/SI)Specifications: GaN-FS-SP-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：<0.5Ω·cm
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