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4" GaN thick film wafer (magnesium doped)

Specifications: GaN-T-C-P-C100 Size: Ф 100 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k):< 10 Ω·cm
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  • 4"

    4" GaN thick film wafer (magnesium doped)

    File size:

    140KB

    Time:

    2022-10-18 09:12:00

File size:
140KB
2022-10-18 09:12:00
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