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6" GaN thick film wafer (magnesium doped)

Specifications: GaN-T-C-P-C150 Size: Ф 150 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k):< 10Ω·cm
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  • 6"

    6" GaN thick film wafer (magnesium doped)

    File size:

    133KB

    Time:

    2022-10-21 09:55:00

File size:
133KB
2022-10-21 09:55:00
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