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  • 4 inch Free-Standing GaN Substrates

  • 2 inch Free-Standing GaN Substrates(Un-doped)

  • 2 inch Free-Standing GaN Substrates(Si-doped)

  • 2 inch Free-Standing GaN Substrates(Fe-doped)

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APPLICATION
  • SEMICONDUCTOR LIGHTING

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  • BLUE AND GREEN LD

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  • HIGH POWER ELECTRONIC POWER DEVICE

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NEWS
High Quality Free-Standing GaN Substrates have a Significant Impact on Schottky Barrier Diodes

Xinku Liu and his team reported the vertical GaN Schottky barrier diodes (SBDs) on 2” freestanding (FS) GaN wafer from Suzhou Nanowin Science and Technology Co.,Ltd. In the SBDs they developed.

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