4 inch Free-Standing GaN Substrates
2 inch Free-Standing GaN Substrates（Un-doped）
2 inch Free-Standing GaN Substrates（Si-doped）
2 inch Free-Standing GaN Substrates（Fe-doped）
BLUE AND GREEN LD
HIGH POWER ELECTRONIC POWER DEVICE
Xinku Liu and his team reported the vertical GaN Schottky barrier diodes (SBDs) on 2” freestanding (FS) GaN wafer from Suzhou Nanowin Science and Technology Co.,Ltd. In the SBDs they developed.
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Suzhou Nanowin Science and Technology Co.,Ltd
Address: CN-20, Nanopolis Suzhou,99 jinji Lake Avenue, Suzhou Industrial Park, Jiangsu Province, P.R. China 215123
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