Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support of major achievement transformation projects in Jiangsu Province and talent projects at all levels in Suzhou City, after 10 years of research and development, we have completed the complete process development from the independent research and development of material growth equipment to the growth and preparation of GaN single crystal substrate, and the dislocation density of 2-inch GaN single crystal substrate has been reduced to 10⁴cm², reaching the world advanced level. In the past two years, we have completed the key technology development of 4-inch and 6-inch GaN single crystal substrates. At present, GaN single crystal substrate products have been provided to more than 500 customers, basically completed the occupation of the R & D market, is to enhance the production capacity to the enterprise application market development, the key breakthrough direction is blue-green semiconductor laser, high-power power electronic devices, high reliability and high-power microwave devices and other major areas. Nearly one hundred core patents have been filed, and more than one hundred invited reports have been made in various important international academic conferences and industrial forums, and Suzhou Navi has received wide attention from the industry and international counterparts.
Wang Jianfeng - General Manager of Suzhou Navi Technology Co.
Born in October 1979, he received his B.S. and Ph.D. degrees from Wuhan University in 2001 and 2006 (jointly trained with the Institute of Semiconductors, Chinese Academy of Sciences), and has been engaged in the preparation and industrial development of GaN single crystal substrates since then. For GaN growth equipment, Dr. Wang Jianfeng innovatively introduced an in-situ optical monitoring system to achieve real-time monitoring of growth rate and stress, which greatly promoted GaN material development; since the past 5 years, he has deeply studied the HVPE growth mechanism and defect evolution mechanism of GaN, and used intermediate layer methods such as periodic masks and GaN nanopillar arrays to obtain crack-free, high-quality GaN materials with performance up to that of similar methods publicly reported. The performance reached the best value (dislocation density <10⁵cm², room temperature electron mobility 1100cm²/V-s) publicly reported by similar methods so far; using doping technology, the development of 2-inch non-doped, N-type doped and semi-insulation compensated doped GaN single crystal substrates was achieved. Since the last 3 years, the preliminary preparation of 4-inch GaN single-crystal substrate has been realized. As the project leader and core personnel to participate in the Ministry of Science and Technology 863 projects, international cooperation projects, Natural Science Foundation projects, the Chinese Academy of Sciences STS projects, more than 10, declared more than 20 related core patents, in ICNS, APWS and other important international conferences to make invited reports 5 times. The project applicant has won the China Industry-University-Research Promotional Innovation Achievement Award, the Lu Jiaxi Young Talent Award of Chinese Academy of Sciences, and the Suzhou Model Worker Award.