Gallium nitride single crystal substrates for RF electronics
- Categories:Application areas
- Time of issue:2022-09-26 10:35:40
- GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
- HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
- Semi-insulated GaN, Fe doped, C doped