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4" self-supporting GaN wafer
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2" self-supporting GaN wafer
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Custom-sized self-supporting GaN wafers
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Non-polar / semi-polar GaN self-supporting wafers
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5*10mm2 non-polar GaN self-supporting substrate A-plane (UID/N/SI)
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5*10mm2 non-polar GaN self-supporting substrate M-plane (UID/N/SI)
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5*10mm2 semi-polar GaN self-supporting substrate Semi-polar-(10-11)plane (UID/N/SI)
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5*10mm2 semi-polar GaN self-supporting substrate Semi-polar-(11-22)plane (UID/N/SI)
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5*10mm2 semi-polar GaN self-supporting substrate Semi-polar-(20-2-1)plane (UID/N/SI)
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2-6" GaN thick film wafers
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6" GaN thick film wafer (undoped)
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6" GaN thick film wafer (silicon doped)
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6" GaN thick film wafer (magnesium doped)
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4" GaN thick film wafer (undoped)
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4" GaN thick film wafer (silicon doped)
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4" GaN thick film wafer (magnesium doped)
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2" GaN thick film wafer (undoped)
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2" GaN thick film wafer (silicon doped)
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2" GaN thick film wafer (magnesium doped)
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2-4 inch aluminium nitride thick film wafers
Dimensions: (5.0 to 10.0) x 10.0 mm²;
(5.0~10.0) x 20.0 mm²
Thickness: 350 ± 25 µm
Resistivity (300k): <0.1 Ω-cm
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