GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal substrate, the key material of the third generation semiconductor. Now we are one of the few domestic and international units that can provide 2-inch GaN single crystal products in batch; the comprehensive performance index of GaN products is leading in the world, and in the next three years, we will focus on transforming our technological first-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor single crystal materials. Gallium Nitride is the representative of the third generation semiconductor, it is the core basic material for energy-saving lighting, laser projection display, smart grid, new energy vehicles, 5G communication and other industries, and is expected to form a trillion dollar market in the future.

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Professional supplier of high quality GaN substrates

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it is the core basic material for energy-saving lighting, laser projection display, smart grid, new energy vehicles, 5G communication and other industries, and it is expected to form a trillion dollar market scale by the future...

Learn more