Dr. Xu Ke, Chairman of Nanowin Suzhou, was awarded the 2013 National Outstanding Young Scientists Fund
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- Time of issue:2022-09-26
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(Summary description)Approved by the State Council on 14 March 1994 and administered by the National Natural Science Foundation of China, the National Outstanding Young Scientists Fund aims to support outstanding young scholars under the age of 45 to engage in basic research in natural sciences in Mainland China, with the aim of promoting the growth of young scientific and technological talents, encouraging overseas scholars to return to work in their home countries, and cultivating a group of outstanding academic leaders who will enter the frontiers of science and technology in the world.
Dr. Xu Ke, Chairman of Nanowin Suzhou, was awarded the 2013 National Outstanding Young Scientists Fund
(Summary description)Approved by the State Council on 14 March 1994 and administered by the National Natural Science Foundation of China, the National Outstanding Young Scientists Fund aims to support outstanding young scholars under the age of 45 to engage in basic research in natural sciences in Mainland China, with the aim of promoting the growth of young scientific and technological talents, encouraging overseas scholars to return to work in their home countries, and cultivating a group of outstanding academic leaders who will enter the frontiers of science and technology in the world.
- Categories:Media Coverage
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- Time of issue:2022-09-26
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Dr. Xu Ke, Chairman of Suzhou Nanowin and a researcher of Suzhou Nano Institute (SNI), was awarded the 2013 National Outstanding Young Scientists Fund (NYSF) project, which is the first recipient of NYSF nurtured by SNI.
The National Outstanding Young Scientists Fund was approved by the State Council on 14 March 1994 and is administered by the National Natural Science Foundation of China (NSFC). It aims to support outstanding young scholars under the age of 45 to conduct basic research in natural sciences in Mainland China, to promote the growth of young scientific and technological talents, to encourage overseas scholars to return to work in China, and to cultivate a group of outstanding academic leaders who will enter the frontiers of science and technology in the world.
Dr. Xu Ke has been working on GaN materials and devices for a long time, and has done systematic and in-depth research on MOCVD growth, MBE growth and HVPE growth of nitride materials, especially in the areas of non-polar surface GaN growth, the effect of crystal polarity on nitride growth, and HVPE growth of GaN single crystal substrate materials. In the past ten years, Dr. Xu Ke and his team have started from the development of HVPE growth equipment and high spatial resolution integrated optoelectronic test system. On the basis of in-depth research on the HVPE growth physics of GaN, they have successfully developed high quality 2-inch GaN substrates with dislocation density as low as 104cm-2 orders of magnitude; through doping compensation, they have successfully developed 2-inch semi-insulated GaN, which has filled the gap in China. With the support of the Science and Technology Leading Talents Program and venture capital funds, Suzhou Nanowin, the industrialization company of this achievement, has achieved the batch preparation of GaN substrates with controlled electrical performance and low defect density of greater than 2 inches, and the mass production of high quality GaN single crystal substrates is important for China to carry out the development of high-end optoelectronic devices based on GaN. The mass production of high quality GaN single crystal substrates is of strategic importance to the development of high-end GaN-based optoelectronic devices and microwave power devices in China.
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