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4" self-supporting GaN wafers (non-doped)

4" self-supporting GaN wafers (non-doped)

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4-inch self-supporting GaN wafers (iron doped)

4-inch self-supporting GaN wafers (iron doped)

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2" self-supporting GaN wafers (non-doped)

2" self-supporting GaN wafers (non-doped)

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2-inch self-supporting GaN wafers (silicon doped)

2-inch self-supporting GaN wafers (silicon doped)

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2-inch self-supporting GaN wafers (iron-doped)

2-inch self-supporting GaN wafers (iron-doped)

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10*10.5mm<sup>2</sup>Self-supporting GaN wafers (undoped)

10*10.5mm2Self-supporting GaN wafers (undoped)

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Professional, high-quality gallium nitride substrate supplier

Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support of major achievement transformation projects in Jiangsu Province and talent projects at all levels in Suzhou City, after 10 years of research and development, we have completed the complete process development from the independent research and development of material growth equipment to the growth and preparation of GaN single crystal substrate, and the dislocation density of 2-inch GaN single crystal substrate has been reduced to 10⁴cm², reaching the world advanced level. In the past two years, we have completed the key technology development of 4-inch and 6-inch GaN single crystal substrates. At present, GaN single crystal substrate products have been provided to more than 500 customers, basically completed the occupation of the R & D market, is to enhance the production capacity to the enterprise application market development, the key breakthrough direction is blue-green semiconductor laser, high-power power electronic devices, high reliability and high-power microwave devices and other major areas.

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2007 Year

Established

500 +

Clients Served

60 +

Core Patents

50 +

Invitation to Report

10 billion+

Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it is the core basic material for energy-saving lighting, laser projection display, smart grid, new energy vehicles, 5G communication and other industries, and it is expected to form a trillion dollar market scale by the future...

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Radio Frequency Electronics Field

Radio Frequency Electronics

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Power Electronics Field

Power Electronics

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New Display Field

New display field

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News Center

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

Navitas Technology’s GaN single-crystal substrate products have cumulatively served more than 500 customers, achieving a leading market position in the blue- and green-light semiconductor laser sector, while the company continues to expand its footprint across three major areas: RF electronics, power electronics, and next-generation displays.
Construction of the Suzhou Navi Headquarters Building Officially Commences

Construction of the Suzhou Navi Headquarters Building Officially Commences

On the morning of January 24, 2021, the groundbreaking ceremony for the headquarters building construction project of Suzhou NavTech Co., Ltd. was officially held in the Suzhou Industrial Park. Attending the ceremony were Ding Lixin, Deputy Secretary of the Party Working Committee and Director of the Management Committee of the Park; Deng Qiang, Secretary of the Party Committee and Deputy Director (in charge of daily operations) of the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences; Wu Weipeng, former Secretary of the Party Group of the Suzhou Science and Technology Bureau; Ni Qian, Member of the Party Working Committee and Deputy Director of the Management Committee of the Park; and Xu Wenqing, Secretary of the Party Working Committee of the Dushu Lake Science and Education Innovation Zone.
Process Flow of Typical GaN RF Devices

Process Flow of Typical GaN RF Devices

The typical fabrication process for GaN RF devices comprises the following key steps: epitaxial growth, device isolation, ohmic contact formation (for the source and drain), nitride passivation, gate electrode formation, field plate formation, substrate thinning, and substrate via formation.
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