Product Applications
Gallium nitride single crystal substrates for RF electronics
- GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
- HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
- Semi-insulated GaN, Fe doped, C doped
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Dai Dongyun: +86 159 6225 7010
Email: daidongyun@nanowin.com.cn
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Miss Ren: +86 177 1248 2910
Email: sales-asst@nanowin.com.cn
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