Radio Frequency Electronics
GaN material-based RF devices, with the advantages of high power, high efficiency, high temperature resistance, irradiation resistance, etc., is the most ideal semiconductor RF electronic devices to date.
Power Electronics
The mainstream development trend of power electronics, higher voltage, higher current, higher efficiency, smaller size, higher reliability, from a single power conversion to "energy router development", the need to faster, with higher efficiency to deal with higher power energy.
New Display Field
GaN single crystal: smaller size, higher resolution, chip wavelength consistency, smaller leakage current, higher efficiency under low current drive, homogeneous epitaxial MicroLED technology on the road to "Moore's Law".