Information Center

Information Center

Information Center

Information Center

Company News

Industry News

Media Coverage

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

2025-05-09

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

Navitas Technology’s GaN single-crystal substrate products have cumulatively served more than 500 customers, achieving a leading market position in the blue- and green-light semiconductor laser sector, while the company continues to expand its footprint across three major areas: RF electronics, power electronics, and next-generation displays.

Construction of the Suzhou Navi Headquarters Building Officially Commences

2022-09-26

Construction of the Suzhou Navi Headquarters Building Officially Commences

On the morning of January 24, 2021, the groundbreaking ceremony for the headquarters building construction project of Suzhou NavTech Co., Ltd. was officially held in the Suzhou Industrial Park. Attending the ceremony were Ding Lixin, Deputy Secretary of the Party Working Committee and Director of the Management Committee of the Park; Deng Qiang, Secretary of the Party Committee and Deputy Director (in charge of daily operations) of the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences; Wu Weipeng, former Secretary of the Party Group of the Suzhou Science and Technology Bureau; Ni Qian, Member of the Party Working Committee and Deputy Director of the Management Committee of the Park; and Xu Wenqing, Secretary of the Party Working Committee of the Dushu Lake Science and Education Innovation Zone.

Process Flow of Typical GaN RF Devices

2022-09-26

Process Flow of Typical GaN RF Devices

The typical fabrication process for GaN RF devices comprises the following key steps: epitaxial growth, device isolation, ohmic contact formation (for the source and drain), nitride passivation, gate electrode formation, field plate formation, substrate thinning, and substrate via formation.

New Advances in GaN X-Band GaN Amplifiers and Blocking Converters

2022-09-26

New Advances in GaN X-Band GaN Amplifiers and Blocking Converters

British high-performance microwave power amplifier company Diamond Microwave recently announced the launch of a family of compact, GaN-based pulsed solid-state power amplifiers (SSPAs), including 200-W and 400-W X-band SSPAs, with plans to soon introduce a 1-kW C-band amplifier design and a 1-kW X-band amplifier.

[DisplayTimes] South Korea’s KAIST Develops Flexible Vertical Micro LEDs That Can Stimulate and Activate the Brain While Controlling Behavior

2022-09-26

[DisplayTimes] South Korea’s KAIST Develops Flexible Vertical Micro LEDs That Can Stimulate and Activate the Brain While Controlling Behavior

A South Korean research team has developed a flexible, vertical Micro LED technology that can be implanted into the brains of animals to control their behavior via light stimulation. This technology is suitable for neuroscience research and other biomedical applications, as well as for use in smartphones, mobile-device displays, and wearable lighting products, and has now reached mass-production readiness.

Gallium Nitride | U.S. Air Force Research Laboratory Develops New Flexible GaN Growth Method, with Major Implications for RF Devices

2022-09-26

Gallium Nitride | U.S. Air Force Research Laboratory Develops New Flexible GaN Growth Method, with Major Implications for RF Devices

The U.S. Air Force Research Laboratory (AFRL) has announced the discovery of a new method for growing and transferring gallium nitride (GaN), laying the foundation for next-generation, fifth-generation, high-speed, and flexible communication systems.

Xu Ke: Pioneer of China’s Gallium Nitride Semiconductor Industry

2022-09-26

Xu Ke: Pioneer of China’s Gallium Nitride Semiconductor Industry

The “Qiu Shi Outstanding Young Researchers’ Achievement Transformation Award” is intended to recognize researchers who not only excel in scientific research but also actively promote the industrialization of their research findings, thereby achieving significant economic and social benefits and serving as exemplary role models among young science and technology professionals.

Dr. Xu Ke Honored as One of Suzhou’s Ten Most Charming Science and Technology Figures of 2013

2022-09-26

Dr. Xu Ke Honored as One of Suzhou’s Ten Most Charming Science and Technology Figures of 2013

The results of the 2013 Suzhou Top Ten Charming Science and Technology Figures selection, jointly organized by the Suzhou Municipal Talent Office, the Publicity Department of the Municipal Party Committee, the Municipal Science and Technology Bureau, the Municipal Human Resources and Social Security Bureau, and the Suzhou Association for Science and Technology, have been officially announced. On February 21, 2014, at the Second Plenary (Expanded) Session of the 12th Council of the Suzhou Association for Science and Technology, the ten winners were commended, among whom was Dr. Xu Ke, Chairman of Suzhou Navay.

Dr. Xu Ke, Chairman of Suzhou Navie, Awarded the 2013 National Outstanding Youth Science Fund

2022-09-26

Dr. Xu Ke, Chairman of Suzhou Navie, Awarded the 2013 National Outstanding Youth Science Fund

The National Outstanding Youth Science Fund was approved by the State Council on March 14, 1994 and is administered by the National Natural Science Foundation of China. Its purpose is to support outstanding young scholars under the age of 45 in conducting basic research in the natural sciences on the Chinese mainland, to foster the growth of young scientific and technological talent, to encourage overseas scholars to return to China to work, and to cultivate a group of leading academic figures who will advance to the forefront of global science and technology.

< 12 > proceed page