Gallium Nitride | U.S. Air Force Research Laboratory Develops New Flexible GaN Growth Method, with Major Implications for RF Devices
2022-09-26
The U.S. Air Force Research Laboratory (AFRL) has announced the discovery of a new method for growing and transferring gallium nitride (GaN), laying the foundation for next-generation, fifth-generation, high-speed, and flexible communication systems.
Process Flow of Typical GaN RF Devices
2022-09-26