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2022-09-26
Process Flow of Typical GaN RF Devices
The typical fabrication process for GaN RF devices comprises the following key steps: epitaxial growth, device isolation, ohmic contact formation (for the source and drain), nitride passivation, gate electrode formation, field plate formation, substrate thinning, and substrate via formation.
2022-09-26
New Advances in GaN X-Band GaN Amplifiers and Blocking Converters
British high-performance microwave power amplifier company Diamond Microwave recently announced the launch of a family of compact, GaN-based pulsed solid-state power amplifiers (SSPAs), including 200-W and 400-W X-band SSPAs, with plans to soon introduce a 1-kW C-band amplifier design and a 1-kW X-band amplifier.
2022-09-26
[DisplayTimes] South Korea’s KAIST Develops Flexible Vertical Micro LEDs That Can Stimulate and Activate the Brain While Controlling Behavior
A South Korean research team has developed a flexible, vertical Micro LED technology that can be implanted into the brains of animals to control their behavior via light stimulation. This technology is suitable for neuroscience research and other biomedical applications, as well as for use in smartphones, mobile-device displays, and wearable lighting products, and has now reached mass-production readiness.
2022-09-26
Gallium Nitride | U.S. Air Force Research Laboratory Develops New Flexible GaN Growth Method, with Major Implications for RF Devices
The U.S. Air Force Research Laboratory (AFRL) has announced the discovery of a new method for growing and transferring gallium nitride (GaN), laying the foundation for next-generation, fifth-generation, high-speed, and flexible communication systems.
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