Gallium nitride single crystal in new display applications: microLED technology
- GaN single crystal: smaller size, higher resolution, chip wavelength uniformity, smaller leakage current, higher efficiency under low current drive, homogeneous epitaxial MicroLED technology on the road to "Moore's Law".
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WLD=472.5 nm, std=0.9 nm |
WLD=472.5 nm, std=0.9 nm |
| Wavelength uniformity of homogeneous epitaxial chips on GaN single crystal substrates helps to solve the massive binning problem and the giant transfer problem. | Chips with homogeneous epitaxy on GaN single crystal substrates exhibit better luminescence uniformity. |
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| Smaller leakage currents | Higher efficiency with low current drive |
GaN single crystal in new display applications: laser projection displays
- Gallium Nitride Single Crystals: Gallium nitride single-crystal substrates are the sole substrate technology for laser display systems.
VR glasses
Mobile phone projection
Car display
Laser display
Laser Cinema
Engineering Projection



