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(Summary description)Ø 4 inch mass production technology, Ø 6 inch key technology.
Development of horizontal dislocation density 10³cm-².

2018

(Summary description)Ø 4 inch mass production technology, Ø 6 inch key technology.
Development of horizontal dislocation density 10³cm-².

Information

The dislocation density of 2-inch GaN single-crystal substrates has gained international recognition; 4-inch GaN single-crystal substrates have been completed; the research and development of 6-inch GaN single-crystal substrates has been carried out

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