Information Center

Information Center

Information Center

2022

2022-09-26

Ø 2 inch mass production, Ø 4 inch low volume supply, Ø 7 inch prototype development. Dislocation density: 10³cm-² at R&D level, 10⁵cm-² at volume production level.

Prev: 2018

Next: 2024

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

2025-05-09

Construction of the Suzhou Navi Headquarters Building Officially Commences

2022-09-26

Process Flow of Typical GaN RF Devices

2022-09-26

New Advances in GaN X-Band GaN Amplifiers and Blocking Converters

2022-09-26

[DisplayTimes] South Korea’s KAIST Develops Flexible Vertical Micro LEDs That Can Stimulate and Activate the Brain While Controlling Behavior

2022-09-26

Gallium Nitride | U.S. Air Force Research Laboratory Develops New Flexible GaN Growth Method, with Major Implications for RF Devices

2022-09-26