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10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped)
10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped)
10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped) 10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped)
10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped) 10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped)

10*10.5mm2Self-supporting Gallium Nitride wafers (silicon doped)

Specification: GaN-FS-C-N-S10 Dimensions: Φ 10 x 10.5 mm 2 Thickness: 350 ± 25 µm Resistivity (300 k): < 0.05 Ω·cm
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2022-07-06

Product Description

10x10.5 mm²-FS-GaN规格书

文件大小：108.7KB 时间：2022-07-06
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