Products Center

Products Center

5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(10-11)plane (UID/N/SI)

Specification: GaN-FS-SP-U-S Dimensions: Φ 5 x 10 mm 2 Thickness: 350 ± 25 µm Resistivity (300 k): < 0.5 Ω·cm

2022-07-06

Product Description

(10-11) face F-S GaN规格书

文件大小:232.0KB 时间:2022-07-06
Download

Related Products

4" self-supporting GaN wafers (non-doped)

4" self-supporting GaN wafers (non-doped)

4-inch self-supporting GaN wafers (iron doped)

4-inch self-supporting GaN wafers (iron doped)

2" self-supporting GaN wafers (non-doped)

2" self-supporting GaN wafers (non-doped)

2-inch self-supporting GaN wafers (silicon doped)

2-inch self-supporting GaN wafers (silicon doped)

2-inch self-supporting GaN wafers (iron-doped)

2-inch self-supporting GaN wafers (iron-doped)

10*10.5mm<sup>2</sup>Self-supporting GaN wafers (undoped)

10*10.5mm2Self-supporting GaN wafers (undoped)

10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped)

10*10.5mm2Self-supporting Gallium Nitride wafers (silicon doped)

10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (iron doped)

10*10.5mm2Self-supporting Gallium Nitride wafers (iron doped)

5*10mm<sup>2</sup>non-polar GaN self-supporting substrate A-plane (UID/N/SI)

5*10mm2non-polar GaN self-supporting substrate A-plane (UID/N/SI)

5*10mm² non-polar GaN self-supporting substrate M-plane (UID/N/SI)

5*10mm² non-polar GaN self-supporting substrate M-plane (UID/N/SI)

5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(10-11)plane (UID/N/SI)

5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(10-11)plane (UID/N/SI)

5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(11-22)plane (UID/N/SI)

5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(11-22)plane (UID/N/SI)