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4" GaN thick film wafer (magnesium doped)
4" GaN thick film wafer (magnesium doped)
4" GaN thick film wafer (magnesium doped)
4" GaN thick film wafer (magnesium doped) 4" GaN thick film wafer (magnesium doped)
4" GaN thick film wafer (magnesium doped) 4" GaN thick film wafer (magnesium doped)
4" GaN thick film wafer (magnesium doped) 4" GaN thick film wafer (magnesium doped)

4" GaN thick film wafer (magnesium doped)

Specification: GaN-T-C-P-C100 Dimensions: Φ 100 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300 K): < 10 Ω·cm
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2022-07-06

Product Description

4英寸氮化镓厚膜晶片（镁掺）

文件大小：139.7KB 时间：2022-07-06
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