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Latest Products

4" self-supporting GaN wafers (non-doped)

4-inch self-supporting GaN wafers (iron doped)

2" self-supporting GaN wafers (non-doped)

2-inch self-supporting GaN wafers (silicon doped)

2-inch self-supporting GaN wafers (iron-doped)

10*10.5mm<sup>2</sup>Self-supporting GaN wafers (undoped)

10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (silicon doped)

10*10.5mm<sup>2</sup>Self-supporting Gallium Nitride wafers (iron doped)

5*10mm<sup>2</sup>non-polar GaN self-supporting substrate A-plane (UID/N/SI)

5*10mm² non-polar GaN self-supporting substrate M-plane (UID/N/SI)

Latest News

Ten Leaders Discuss Innovation Benchmarks | An Interview with Xu Ke of Navitas Technology: From the Lab to the Global Market—We Are Dancing in Sync with Suzhou’s Nanomaterials Industry

Construction of the Suzhou Navi Headquarters Building Officially Commences

Process Flow of Typical GaN RF Devices

New Advances in GaN X-Band GaN Amplifiers and Blocking Converters

[DisplayTimes] South Korea’s KAIST Develops Flexible Vertical Micro LEDs That Can Stimulate and Activate the Brain While Controlling Behavior

Gallium Nitride | U.S. Air Force Research Laboratory Develops New Flexible GaN Growth Method, with Major Implications for RF Devices

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