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2" GaN thick film wafer (silicon doped)
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2" GaN thick film wafer (silicon doped)

Specifications: GaN-T-C-N-C50 Size: Ф 50.8 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k):< 0.05 Ω·cm
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  • 2"

    2" GaN thick film wafer (silicon doped)

    File size:

    140KB

    Time:

    2022-10-18 09:18:00

File size:
140KB
2022-10-18 09:18:00
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